| PART |
Description |
Maker |
| MCSO1HV MCSO1HV_C MCSO1V_TBE MCSO1HV/C |
3.3V CMOS Oscillator Mil Temp
|
GOLLEDGE[Golledge Electronics Ltd]
|
| MCSO1 MCSO1V |
From old datasheet system
3.3V SM OSCILLATOR MIL TEMP
|
Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
|
| MCSOF MCSOF_TBE MCSOF_A MCSOF/A MCSOF/TBE MCSOF/AE |
CRYSTAL OSCILLATOR, CLOCK, 72 MHz, CMOS OUTPUT
CRYSTAL OSCILLATOR, CLOCK, 49.152 MHz, CMOS OUTPUT
CRYSTAL OSCILLATOR, CLOCK, 40.6 MHz, CMOS OUTPUT
CRYSTAL OSCILLATOR, CLOCK, 125 MHz, CMOS OUTPUT
CRYSTAL OSCILLATOR, CLOCK, 132.7104 MHz, CMOS OUTPUT
CRYSTAL OSCILLATOR, CLOCK, 100 MHz, CMOS OUTPUT
CRYSTAL OSCILLATOR, CLOCK, 144 MHz, CMOS OUTPUT
CRYSTAL OSCILLATOR, CLOCK, 64 MHz, CMOS OUTPUT
CRYSTAL OSCILLATOR, CLOCK, 160 MHz, CMOS OUTPUT
CRYSTAL OSCILLATOR, CLOCK, 40 MHz, CMOS OUTPUT
CRYSTAL OSCILLATOR, CLOCK, 48 MHz, CMOS OUTPUT
CRYSTAL OSCILLATOR, CLOCK, 44.2368 MHz, CMOS OUTPUT
CRYSTAL OSCILLATOR, CLOCK, 110.592 MHz, CMOS OUTPUT
CRYSTAL OSCILLATOR, CLOCK, 102.4 MHz, CMOS OUTPUT
CRYSTAL OSCILLATOR, CLOCK, 128 MHz, CMOS OUTPUT
CRYSTAL OSCILLATOR, CLOCK, 117.946 MHz, CMOS OUTPUT
CRYSTAL OSCILLATOR, CLOCK, 150 MHz, CMOS OUTPUT
CRYSTAL OSCILLATOR, CLOCK, 104 MHz, CMOS OUTPUT
CRYSTAL OSCILLATOR, CLOCK, 108 MHz, CMOS OUTPUT
CRYSTAL OSCILLATOR, CLOCK, 131.072 MHz, CMOS OUTPUT
CRYSTAL OSCILLATOR, CLOCK, 40.96 MHz, CMOS OUTPUT
CRYSTAL OSCILLATOR, CLOCK, 50.75 MHz, CMOS OUTPUT
CRYSTAL OSCILLATOR, CLOCK, 60.9 MHz, CMOS OUTPUT
5V CMOS Oscillator Low Jitter
|
Golledge Electronics, Ltd.
GOLLEDGE[Golledge Electronics Ltd]
|
| PUMA2X0214I-9035 PUMA2X0214I-9045 PUMA2X0214I-9055 |
10MS, DIE, 1.8V, 9 MIL THICKNESS(SERIAL EE)
10MS, 8 SOIC, IND TEMP, GREEN, 1.8V(SERIAL EE)
10MS, 8 TSSOP, IND TEMP, GREEN, 2.7V(SERIAL EE)
10MS, 8 TSSOP, IND TEMP, GREEN, 1.8V(SERIAL EE)
10MS, 8 SOIC, EXT TEMP, 2.7V(SERIAL EE)
10MS, 8 PDIP, IND TEMP, GREEN, 1.8V(SERIAL EE)
SRAM/EPROM 静态存储器/存储
8 ULTRA THIN,MINI MAP,PB/HALO FREE,IND T(SERIAL EE) 静态存储器/存储
10MS, 8 TSSOP, EXT TEMP, GREEN,2.7V(SERIAL EE) 静态存储器/存储
10MS, 8 SOIC, INT TEMP, GREEN, 1.8V(SERIAL EE) 静态存储器/存储
|
Electronic Theatre Controls, Inc.
HIROSE ELECTRIC Co., Ltd.
Maxim Integrated Products, Inc.
|
| AM29LV800BT-80DTC2 AM29LV800BT-80DGI2 AM29LV800BT- |
25NS,OTP CERDIP,883C; LEV B FULLY CMPLNT(EPLD)
20NS, OTP, PLCC, COM TEMP(EPLD)
20NS, SOIC, IND TEMP(EPLD)
25NS, SOIC, COM TEMP(EPLD)
20NS,OTP LCC,883C; LEVEL B FULLY CMPLNT(EPLD)
10MHZ, 8 DIP, COM TEMP(FPGA)
10MHZ, 20 PLCC, IND TEMP(FPGA)
10MHZ, 32 TQFP, COM TEMP(FPGA)
10MHZ, 44 PLCC, COM TEMP(FPGA)
30MHZ, 3.3V, 20 PLCC, COM TEMP(FPGA)
8 TSSOP,PB/HALO FREE,IND,1.8V(SERIAL EE)
DIE SALE, 1.8V, 11 MIL(SERIAL EE)
8 PDIP,PB/HALO FREE,IND TEMP,1.8V(SERIAL EE)
65K CONFIG MEM, 20 PLCC, IND TEMP(FPGA)
10MHZ, 20 SOIC, IND TEMP(FPGA)
128K CONFIG MEM, 20 PLCC, COM(FPGA)
EEPROM EEPROM
10MHZ, 8 NSOIC, COM TEMP(FPGA) EEPROM
512K X 16 FLASH 3V PROM, 120 ns, UUC44
10MHZ, 8 LAP, 5K MOQ(FPGA)
10MHZ, 8 N-SOIC, COM TEMP(FPGA)
10MHZ, 20 PLCC, COM TEMP(FPGA)
512K X 16 FLASH 3V PROM, 80 ns, UUC44
|
ADVANCED MICRO DEVICES INC
|
| CC1A-T1A CC1A-T1M CC1A |
SM Crystal Mil Temp
|
GOLLEDGE[Golledge Electronics Ltd]
|
| CC4V-T1M CC4V CC4V-T1A |
SM Watch Crystal Mil Temp
|
GOLLEDGE[Golledge Electronics Ltd]
|
| CC6F-T1A CC6F-T1M CC6F |
SM Crystal Mil Temp High Freq Fundamental
|
GOLLEDGE[Golledge Electronics Ltd]
|
| AM29LV400B-100WAC AM29LV400B-100WACB AM29LV400B-10 |
PTSE 6C 6#20 SKT RECP
Circular Connector; MIL SPEC:MIL-C-26482, Series I, Crimp; Body Material:Metal; Series:MS C-26482 Series I; No. of Contacts:10; Connector Shell Size:12; Connecting Termination:Crimp; Circular Shell Style:Cable Receptacle RoHS Compliant: No
Circular Connector; MIL SPEC:MIL-C-26482, Series I; Body Material:Aluminum Alloy; Series:MS3120; No. of Contacts:6; Connector Shell Size:10; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle RoHS Compliant: No
FEEDTHRU CAPACITOR, 470PF 4A 100VFEEDTHRU CAPACITOR, 470PF 4A 100V; Capacitance:0.47nF; Voltage rating, DC:100V; Capacitor dielectric type:Ceramic Multi-Layer; Tolerance, :50%; Tolerance, -:20%; Temp, op. max:125(degree C); Temp,
CAP 0.47UF 50V 50-20% X7R SMD-0612 TR-7 PLATED-NI/SN HC-FEEDTHRU
PTSE 3C 3#20 PIN RECP
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 512K X 8 FLASH 3V PROM, 100 ns, PBGA48
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 512K X 8 FLASH 3V PROM, 120 ns, PBGA48
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 4兆位12x 8-Bit/256x 16位）.0伏的CMOS只引导扇区闪
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 512K X 8 FLASH 3V PROM, 150 ns, PBGA48
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 512K X 8 FLASH 3V PROM, 90 ns, PBGA48
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 4兆位12亩x 8-Bit/256亩x 16位）.0伏的CMOS只引导扇区闪
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
|
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
| VCC4-A3A-50M000 VCC4-H3F-50M000 VCC4-B3B-50M000 VC |
CRYSTAL OSCILLATOR, CLOCK, 37.5 MHz, CMOS OUTPUT
CRYSTAL OSCILLATOR, CLOCK, 16.376 MHz, CMOS OUTPUT
CRYSTAL OSCILLATOR, CLOCK, 12.272 MHz, CMOS OUTPUT
CRYSTAL OSCILLATOR, CLOCK, 13.5 MHz, CMOS OUTPUT
CRYSTAL OSCILLATOR, CLOCK, 12.353 MHz, CMOS OUTPUT
CRYSTAL OSCILLATOR, CLOCK, 16 MHz, CMOS OUTPUT
CRYSTAL OSCILLATOR, CLOCK, 11.2896 MHz, CMOS OUTPUT
CRYSTAL OSCILLATOR, CLOCK, 14.318 MHz, CMOS OUTPUT
1.8, 2.5, 3.3, 5.0 volt CMOS Oscillator
|
VECTRON[Vectron International, Inc]
|
| 5962D9960601QUA 5962D9960601QUC 5962D9960601QUX 59 |
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Mil temp. Lead finish hot solder dipped. Total dose 1E4(10krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Mil temp. Lead finish gold. Total dose 1E4(10krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Mil temp. Lead finish factory option. Total dose 1E4(10krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish hot solder dipped. Total dose 1E4(10krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish gold. Total dose 1E4(10krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish factory option. Total dose 1E4(10krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Extended industrial temp. Lead finish hot solder dipped. Total dose 1E4 (10krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Extended industrial temp. Lead finish gold. Total dose 1E4 (10krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Extended industrial temp. Lead finish factory option. Total dose 1E4 (10krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Extended industrial temp. Lead finish hot solder dipped. Total dose 1E4 (10krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Extended industrial temp. Lead finish factory option. Total dose 1E4 (10krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Extended industrial temp. Lead finish gold. Total dose 1E4 (10krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish hot solder dipped. Total dose none.
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Extended industrial temp. Lead finish factory option. Total dose none.
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish gold. Total dose none.
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish hot solder dipped. Total dose 3E4(30krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish gold. Total dose 3E4(30krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish factory option. Total dose 3E4(30krad(Si)).
512K x 8 SRAM. 100ns access time, 5V operation. Prototype flow. Lead finish factory option.
512K x 8 SRAM. 100ns access time, 5V operation. Extended industrial temp rang flow. Lead finish gold.
|
Aeroflex Circuit Technology
|
|
